Preparation And Properties Of Silicon-based Materials Research

As the most important semiconductor material, silicon is playing a very important role in microelectronics field. With the development of science and technology, nano-materials and thin films based on silicon substrate have been widely applied on VLSI, sensors, solar energy cells, and so on. Particularly, dued to good compatibility with conventional microelectronic process, silicon-based nano-materials and thin films have a promising future in the field of optoelectronic integrate devices. In this paper, three kinds of materials: boron nitride (BN) nanorods, silicon nanowires (SiNWs) and carbon nitride (CNX), which are thought as good optoelectronic characterization materials, grown on silicon surface have been investigated respectively.At first, utilizing Plasma Enhanced Chemical Vapor Deposition (PECVD) system, the growth of BN material on silicon surface has been investigated. Scanning electronic microscopy (SEM) images, Energy Dispersive x-ray Spectrum (EDX) and Fourier transform infrared spectroscopy (FTIR) showed that netlike BN nanorods could be synthesized on silicon surfaces at given growth conditions. The BN nanorods have a diameter and length in the range of hundreds nanometers and several micrometers respectively. With different growth conditions such as temperature, flow ratio of reactive gases and growth time, the different sample patterns were observed. The growth microcosmic mechanism was also brought forward.Secondly, SiNWs were prepared on the surfaces of silicon with Au pre-sprayed by one-step heat treatment. SEM images showed that SiNWs could only be synthesized at given heat treatment conditions. The SiNWs have a diameter in the range of 20~250nm, and the length of several to several tens micrometers. On the other hand, utilizing Rapid Thermal Processing (RTP) system, SiNWs were prepared on the same substrates as above. SEM images and Transmission Electron Microscopy (TEM) images showed that SiNWs could only be synthesized at given RTPtemperatures. The SiNWs have a diameter in the range of 50~600nm, and the length of several to several tens micrometers. The growth mechanism of above two progresses was explored.Finally, the research progress of carbon nitride films was systematically reviewed. Utilizing PECVD system, the carbon nitride films were prepared on the silicon substrates. The growth factors such as substrate temperature, the kinds of the source gases and their flow rates were systematically investigated in order to obtain optimum growth parameters. At last, the characterization of CNX films was researched.