Study On Organic Electrical Bistable Devices

Organic electrical bistable devices(OEBDs)show the advantages of low-cost, easy processing,smallsize,fast response,low power and high storage density. OEBDs have attracted more and more attentions due to their wide potential applications in information storage and logic circuits.But the mechanism of OEBDs still hasn't been well understood,and some fundamental questions such as new concepts and theories,new structures,methods,technologies and materials involved during the fabrication and processing need to be further investigated.Main contents are told as follow:1.The characteristic,fabrication of organic electrical bistable devices at present are introduced.2.The characteristic,fabrication of organic electrical bistable devices base on metal-organic complexes Ag-TCNQ and Cu-TCNQ are discussed.3.The fabrication of a bis(8-hydroxyquinoline)zinc amorphous film device and bistable effect are disused.The bistable phenomenon was observed in CuPc film device by analyzing theⅠ-Ⅴcharacteristics.The devices show obvious bistable effect when CuPc film reaches 750nm,the threshold voltage is 7.51V. The threshold voltage of the device with ITO bottom(7.47V)electrode and that with Ag bottom electrode(9.6V)is different.A possible theoretic explaination for the effect is given..4.The characteristic and fabrication of polymer memory based on organic electrical bistablity are reviewed including flash memory,WORM(write-once read-many-times)and DRAM(dynamic random access memory).