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Study On Electrical Characteristic With Organic Semiconductor Device

Posted on:2008-10-14Degree:MasterType:Thesis
Country:ChinaCandidate:C X ZhangFull Text:PDF
GTID:2178360212999278Subject:Condensed matter physics
Abstract/Summary:PDF Full Text Request
Past over ten years, the material of semiconductor device is mostly inorganic semiconductor material and achieves extensive application. However, as far as, inorganic semiconductor electronic devices, representatives of Si, have processed in sub-micro or close sub-micro, and the integrated degree its technical level can reach has inclined to physics limit. Appearance of organic semiconductor material enriched greatly people's view; also inspired people's extensive research interest and have become a today's research hotspot. Organic electronic device have excellent characteristic exceed to inorganic device in some flied, such as simple making technics, low cost, flexible, and have hope of realizing large-scale production. At the same time, some organic electronic device show itself electronic characteristic. Therefore, finding and researching electronic characteristic of organic semiconductor device is a very necessary work and is favor of driving the field of organic semiconductor device area to develop fast.In this thesis, we researched electrical characteristic of organic semiconductor device. The content has two parts: (1) liquid organic semiconductor device (2) solid organic semiconductor device. In each part, fabrication of device is expatiated; the characteristic of device is researched and the corresponding qualitative operating mode is given.During the fabrication and research of liquid device, we use very easy way in which device fabricates; organic polarizable material threonine is use of the device functional material and the different phenomena of current vibration though solution were presented with the applied gate voltage. We particularly researched that the Voltage-Current curve though source electrode and drain electrode under different electric field; the Voltage-Current circle curve though source electrode and drain electrode under the different gate voltage and the dependent curve of current on the time in the voltage. For explaining current vibration phenomena, we observed that the impedance of threonine have a relation with the frequency of voltage though source electrode and drain electrode under the different electric field. Finally, According to these performances, we presented a qualitative liquid polarizable molecule mode used for explaining device current vibration.During the fabrication and research of thin-film-crystal device, we use organic polarizable thin film material 2-(4-hydroxyphenyl)-5-pyrimidinol for the device functional material. The patterning technique of shallow evaporation was used for the fabrication of electron channel as long as 20μm and as wide as 10mm. After accomplishing the measurement for the device, we found three types of device performance with the different morphology. Also, we observed the anomalous electrical properties of the devices, including the normal IDS-VDS curves of OFETs, the battery properties of the devices controlled by the applied VG, and the disappearance of the field effect performance when the sample was measured many times. The device exhibited the similar performance with the above thin-film-crystal device. Based on these device performances, we proposed a qualitative organic polarizable crystalline grain mode to explain the above phenomenon.
Keywords/Search Tags:organic semiconductor device, current vibration, anomalous current, polarity solution model
PDF Full Text Request
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