| It's valuable for SiCGe film grown on 6H-SiC substrate as this may make it sensitive to visible and near infrared light by accommodating its band gap to make new opto-electronic applications for SiC-based devices.However, there are many difficulties in material growing.It's important to optimize process condition and improve the quality of the film based on the right testing and analyzing.In this thesis,3C-SiC buffer and SiCGe films were hetero-epitaxially grown on SiC substrates in a hot-wall chemical vapor deposition(HWCVD)system,and the growth processes and the material characteristics of them were presented.The main results in this thesis are as follows:1.The effects of gas source flow-rates and growth temperature on 3C-SiC were researched in this paper.3C-SiC film with good quality was grown in the hot wall CVD system by the improving in the growth parameters,and the sample was tested by SEM,AFM,TEM,and XPS.An optimum growth condition that the temperature was 1250℃,the pressure was 480Pa,and the flow-rate ratio was 2000:10:4 SCCM for H2:SiH4:C3H8 was obtained.For the 3C-SiC film grown in this condition,the sample's surface was smooth,and it was grown in layer by layer mode;the substrate and epi-layer were well-arranged 6H-SiC structure and 3C-SiC structure,separately,with a smooth transition and no polytype in the junction.2.The impact of the gas source flow-rate ratio and growth temperature on the SiCGe films were investigated.At a growth temperature of 1250℃and a flow-rate ratio of 1000:10:4:2 SCCM for H2:SiH4:C3H8:GeH4,high quality SiCGe films with two-dimension layer growth mode were obtained.3.The light permeation characteristics of SiCGe samples were tested and their energy bandgaps were calculated. |
