Fabrication Of High Power Semiconductor Lasers

Based on the quantum well laser theory, summarization and discussion on high power laser diodes are given in the device structural design.For the purpose of improvement of power output characteristics, attempts were made to passivate facet by a plasma nitridation technique, which will increase the catastrophic optical mirror damage(COMD) level. Effectiveness of passivation is evaluated qualitatively by photoluminescence. The passivation effect, characterized by photoluminescence analysis , showed some enhancement in band-edge PL intensity of GaAs after passivation when compared with the same sample before passivation. Influence of passivation conditions on passivation effect in the experiments is studied. The passivation conditions include temperature, time, gas flow rate of nitrogen and hydrogen, power of RF plasma. Some conclusion have been confirmed, which may provide help for further study on the facet passivation by nitridation.