Nanoparticle's,Carbon Nanotube Self-assemble And The Silicon Nanopillar Arrays Fabrication By RIE

With the rapid development in the microelectronic industry , traditional photolithography technique is difficult to fabricate devices as the critical dimension shrinking, so it is very important to develop new nano-fabrication methods. Recently , nano-assembly technology is very popular in nano-device fabrication, The fabrication of the periodic nanostructure has been an extremely active area such as electronics, sensors and micro-mechanical machines. Nano-assemble technology mainly include L-B technology and self-assemble technology ,self-assemble technology especially have received intense attention because of its easy control process,low price and kinds of merits .In this paper ,we mainly research on the self-assemble technology of Au,SiO2 nanoparticles and SWCNT. Then high aspect ratio nano-arrays are fabricated via reactive ion etching utilizing the gold colloidal particles monolayer as an etch mask.It's found that it can assemble uniform gold nano-particle monolayer on kinds of substrate through controlling self-assemble process (such as: different coupling agents,self-assemble time,colloidal concentration ). At the same time, combine self-assemble and vertical deposition method, it can effectively improve bonding force and density between silica nanoparticles and substrate which is useful to nano-fabrication. Moreover ,we successfully obtain uniform,mono-dispersed single wall carbon nanotube(SWCNT) on silicon substrate through self-assemble technology, which supply a new method to fabricate carbon nanotube nano-device.A large-area nanopillar fabrication method by nanoparticle monolayer as an etch mask is displayed, which can be used in kinds of nano film fabrication .The silicon nanopillar arrays are fabricated using gold nano-particles as etching mask by Reactive Ion Etching. The influence of different parameters in etch process, such as gas ratio, etch power and etch time, on silicon nanopillar arrays are investigated in detail. A large-area Si nanopillar arrays with pillar size of <20 nm and aspect ratio>10:1 can be obtained on Si substrate by controlling the suitable etch parameters. The approach reported here offers a possibility to produce large-area nanopillar, which is important for developing periodic nanostructure.