Analysis Of Optoelectronic Properties Of Carbon Nanotube Photosensitive Device By Classical Electromagnetic Theory

During the second half of the 20th century, the famous physicist Fernman had predicted that the nanotechnology would become a promising technology in the future day. Nowadays such prediction has become true, nano- technology has got a great development, and it can be expected that this technology will play a key role in the 21st century. Carbon nanotube (CNT) was firstly discovered in 1991, it is a breakthrough of the nanotechnology. In recent years, many devices based on CNT were developed fast; the carbon nanotube photosensitive device discussed here is one try of the carbon nanotube devices.The optoelectronic properties of CNT photosensitive device is very important in evaluating the performance of such kind of device and then make a good design of it.However, since the dimension of the device is in nano-scale, it is a hard task to measure the absorbed power using experiment instrument; moreover considering the error brought by the experiment instrument itself, to get an relatively accurate value of the relevant parameter become impossible, therefore, theoretical analysis and numerical simulation will bring much convenience to the research work in this device. The purpose of this article is to evaluate the optical energy through building a reasonable electromagnetic model for the carbon nanotube photosensitive device excited by the light source, meanwhile we will also make a deep analysis of optoelectronic properties of the photosensitive device by Numerical simulation technology. From the research results, some constructive advices for designing such kind of photosensitive device are given.