| Nanometer MgO is a new kind of inorganic matierial which has different special properties from its body material such as optics, calorifics, electrics, mechanics, chemistry, and so on. So it has broad application in fields such as electron, catalysis and ceramics. It can be used to make fireproof matierials and metal-ceramics, as well as to cosmetic, paint, sachet, lipolytic and polished materials. It is also hoped to be advanced materials in slashing conditions of high temperature and high corrosive gas. It is widely used in transducer, radar wave and antimicrobial matierials. Therefore people pay more and more attention to it.In this paper, MgO nanopaticles was fabricated in low temperature by sol-gel method using sodium nitrate (Mg(NO3)2) and stearic acid as precursor. X-ray diffraction (XRD), Fourier transformed infrared spectroscopy (FTIR), X-ray photoelectron energy spectroscopy (XPS) and Transmission electron microscopy (TEM) were all used to characterize the structure and morphological properties of the samples. The results demonstrated that the samples annealed at 400℃had good crystalline quality and elliptical shape with the average size of 18nm. The higher the annealing temperature was, the bigger the diameter of nanometer MgO was, the better the crystalline quality was.MgO nanoparticles were also prepared by homogenous precipitation technique, using sodium nitrate as raw materials. The results showed that the as-prepared MgO belongs to cubic system and the average size was 14nm. The particles grouped together in floccule shape because of the collision among little particles during the annealing process.MgO is a kind of insulating inorganic matierial with rock-salt structuer. It has been widely used as buffers layers due to its inertness, electricity insulation, high heat exchange and high-temperature stability. MgO is similar in some key characteristics to Si-substrate, Pt-electrod and the crystal lattice constant of superconducting and ferroelectric materials. Now Using MgO as buffers layers we have prepared superconducting films, piezoelectric films and ferroelectrics films with high quality on semiconducter substrates (Si and GaAs). MgO film is also an important dielectric protective materials. Because of its good refractory and high secondary electron emission coeffient, MgO films have been developed as protective layers of dielectrics to improve the discharge characteristics and the panel's lifetime in plasma display panels (PDP).In this paper, MgO films was synthesized on Si(111) substuates by annealing the Mg films deposited by direct current magnetron sputtering system. The structure, elemental composition and morphology of MgO films were determined by XRD, FTIR, XPS and SEM. The results showed that the crystalline quality of MgO films depended greatly on the annealing temperature of the Mg films and the optimum tempertature is 900℃. The sputtering time greatly affected growth orientation of the MgO films. The samples deposited for 40min possessed only (200) and (220) preferential orientations, while deposited for 60min have no obviously preferred orientation.MgO films were also deposited on Si (111) substuates by electrophoretic deposition technique. The measurement of XRD, FTIR, XPS, SEM and TEM indicated that the as-grown films annealed at 700℃were polycrystalline MgO and were made up of relative symmetrical particles with the size of 1~5μm. With the increase of annealing temperature, the crystal quality of the MgO films improved unceasingly, while the surface morphology of the MgO films changed unconspicuously. |
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