Damage Mechanisms Of Laser On PV-type Single Element HgCdTe Device And Visible-light CCD

The increasing use of photodetectors has drawn attention to the need for a characterization of laser irradiation on the detectors. The main work that has been done are introduced as follows:1. A lot of work has been done in laser irradiation on PV-type single element HgCdTe device.The detector's response under both high repetition rate pulsed laser and CW-laser are studied,and the experimental result shows that the saturation thresholds of high repetition rate pulsed laser is lower than the saturation thresholds of CW-laser. And the higher the pulse-energy and peak-value,the lower the saturation thresholds .In the case of HF and DF laser irradiation,the saturation thresholds are given under the situation of experimental setup with and without a filter.It is found that the saturation thresholds are higher with a filter in front of the detecter.The damage mechanisms under high-power laser is studied.It is found that after laser damage the p-n junction degraded and the detector's responsivity is lower than before. Further more,A theoretical model,which describes temperature raise in HgCdTe detector,is set up.2. Some work has been done in laser irradiation on visible light CCD. The damage thresholds of CCD's chip surface is experimently studied, what's more, the damage mechanism of CCD under repeated radiation of DF CW-laser is studied.