Study Of Thermal Effect And Reliability Of Multilevel Metal Routing In ULSI

In this paper, the thermal analysis and the reliability of multilevel metalinterconnects are studied. In multilevel metal interconnects network, dielectric, metalwire separation, metal level separation, metal wire thickness, metal wire width andcurrent density for impact of multilevel metal interconnects are calculated detailedly.At the same time, via density, via diameter, via separation and via height for impact ofeffective thermal conductivity are also calculated in detail. Thermal conductivity forimpact of metal wire thermal of multilevel metal interconnects are analysedfurthermore. Moreover, by electromigration theory, metal wire length, metal wireshape, metal wire height, metal wire width, crystal structure, temperature and currentdensity for impact of Median Time to Failure are researched. The result indicating thatthe maximum temperature locates in the middle of the metal wire if via notself-heating and the maximum temperature locates in the via if via self-heating.What's more, effective thermal conductivity after considering via self-heating effectmuch more draws close to the practical institution. In the reliability studying, theresult indicating that the ability of resisting electromigration requires to degradetemperature of metal wire, optimize characteristic of metal wire and use material oflarge activation energy. In a word, after considering these factors, temperature ofmultilevel metal interconnects much more draws close to the actual temperaturedistribution and increases reliability of devices so that theory foundation is presentedthat can make the IC designer design chip of high performance and high reliability.