The Study Of Field Emission Cold Cathode Based On Nanocrystalline Silicon Quantum Dots

Field emission display (FED) device is one of the flat panel display devices whose emission theory is the most close to the cathode-ray tube (CRT). Its thickness is the same as the LCD, the speed on the response and the dynamic scope are close to the CRT. The cold cathode is the important part of the FED whose material attracts researchers'attention. Nanocrystalline silicon (nc-Si) field emission cold cathode is considered as the most promising electronic emitter and a breakthrough in the display device, because it can be compatible to the microelectronic technique as a whole silicon device and will be integrated into the large scale integrate circuit.This paper introduces the development of the flat panel display devices in popularity and the research of the field emission cold cathode material, expatiates the theory of field emission and studies the Fabrication method on nc-Si film. By combination of laser ablated deposition and rapid high temperature anneal, the 400nm-thick nc-Si quantum dots film was fabricated on the n-Si(4-5Ω?cm) substrate. By the instruments of Raman spectrum(Raman),X-ray diffraction(XRD),transmission electron microscope(TEM) and atom force microscope(AFM), we study the nc-Si film and find that the quantum dot arranges tightly and equally, which has a good single crystal structure. The crystallization ratio of the nc-Si film is very high and the size of it proves to be controlled by the annealing temperature. We test the field emission character of the nano-silicon cold cathode, come out the electronic ballistic emitter theory model and verify the electronic field distribution by the Ansys software simulation. At last, we research the wall spacer's problem in the practice and compare the two precepts with the Ansys software.