Design And Fabrication Of Full-color Micro-LED Array Device Based On InP/ZnS Quantum Dots Material

Micro-LED is the next generation of high resolution display technology which has great application potential in the field of display.Full color display capability is an important evaluation index of the performance of display devices,and full-color Micro-LED technology is also the core problem in the development process of this display technology.At present,the preparation method of the full-color Micro-LED display device mainly with the help of transfer-assembly technology which includes fluid selfassembly,PDMS transfer and mechanical transfer.However,transfer-assembly technology has difficulty in chip picking,transfer accuracy controlling,transfer efficiency and defect reparation.This difficulty yet to be overcome and full-color Micro-LED device preparation technology still limits the rapid development and industrial application of Micro-LED device.In order to study the new fabrication technology of full-color Micro-LED display device,this paper proposes a full-color technology scheme based on blue light MicroLED array device and environmental friendly InP/ZnS core-shell quantum dot materials.Quantum dots is a kind of high quality phosphor material which can be combined with Micro-LED to prepare full-color Micro-LED device.This paper mainly includes three parts:(1)The characteristics of GaN material and the structure of LED epitaxial wafer are introduced.The photoelectric characteristics and the physical mechanism of LED are introduced.The research progress of monochrome Micro-LED device and full-color Micro-LED device are introduced and analyzed.(2)A new structure of integrated full-color Micro-LED device was designed.The design and fabrication of InP/ZnS quantum dots color conversion layer substrate were carried out.A 16×16 InP/ZnS quantum dot color conversion layer device with a center distance of 90?m pixel units was prepared.The inkjet printing is used to fabricate quantum dots color conversion layer and lift-off process was also designed and verified;(3)The manufacturing process design of active-driven blue-light Micro-LED array device was completed.The process verification of hot-pressing bonding,sapphire substrate laser lift-off and ICP etching of GaN material was carried out.