The Structural Design And Technological Study Of Surface-Emitting Lasers With 45° Deflector

In this thesis, the overall optimization designs on surface-emitting lasers (SEL) with 45° deflector structure are carried out. We have mainly considered two types of Surface-emitting Lasers with 45° deflector: surface-emitting lasers with 45° intracativity micro-mirrors and composite surface-emitting lasers. The epitaxial growths of InGaAs/GaAs/AlGaAs strained quantum well laser materials are extensively studied by molecular beam epitaxy in our work. The influences of individual growth conditions.such as V/III ratios,substrate temperature,sunbstrate orientation.doping and growth rate on the epitaxial wafer quality are analyzed. PL. XRD and SEM were adopted to evaluate the InGaAs/GaAs/AlGaAs strained QW laser materials.The effects of strain on InGaAs crystal parameters were taken into consideration, and therefore.optimized multi-quantum well laser structures were determined from XRD experimental data. The n=l fundamental state exciton light emission peak from 1# InGaAs/GaAs quantum well has been observed from PL experiments.Based on the above, we have made a research on the fabrication technology of two-dimensionally arrayed SEL lasers. SEL arrayed lasers have been preliminarily fabricated with 45° deflectors with lower threshold current density and higher output power.The present wok has paved the way to fabricate SEL arrayed lasers with higher reliability, lower threshold current and high power output.