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The Structural Design And Technological Study Of Surface-emitting Lasers With 45°Deflector

Posted on:2003-03-11Degree:MasterType:Thesis
Country:ChinaCandidate:W F LiuFull Text:PDF
GTID:2168360092481131Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
In this thesis , the overall optimization designs on surface-emitting lasers with 45 deflector structure are carried out. We have mainly considered two types of Surface-emitting Lasers with 45 deflector: surface-emitting Lasers with 45 intracativity micro-mirrors and combined surface-emitting lasers, and then designed detailed fabrication processes. The epitaxial growths of InGaAs/GaAs/AlGaAs fundamental material and the fabrication of 45 -deflector are extensively studied in our work. Some measuring methods are used to evaluate the growth quality of our grown structure by PL, CV, X-ray double crystal diffraction, SEM etc.. property analysis are provided for it. Based on the above, we have made a research on the fabrication technology of two-dimensionally (2D) arrayed surface -emiting lasers, and have obtained two-dimensionally arrayed laser primarily with lower threshold current density and higher power output, which will promote the achievement of higher reliability, lower threshold current arrayed surface -emiting lasers laser for high power output.
Keywords/Search Tags:Surface-emitting semiconductor laser with 45°intracativity micro-mirror, Combined Surface-emitting semiconductor laser, 45° deflector, Two- dimensionally arrayed semiconductor lasers
PDF Full Text Request
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