Research Of Ion Implantation Technology In Modern IC Manufacturing Process

Ion implantation is a very important technology in modern integrated circuit manufacturing. As the rapid development of microelectronics technology with smaller device dimension and higher integration, the semiconductor process becomes more complex and as the booming in the international and widely used high-tech, ion implantation technology has become the most important process and plays a very important role in the whole development of IC industry.The principle and features of ion implantation technology has been introduced and then compared with the traditional thermal diffusion doping. Based on this, some issues ion implantation doping in the actual process are discussed. Because of the stable controllability and repeatability on the doping concentration and depth, ion implantation has become an indispensable doping technology in VLSI industry, and is playing an increasingly important role in modern integrated circuit manufacturing.Ion implantation and annealing processes are simulated with the device / process simulation tool ISE-TCAD; based on optimization of several parameters in the process of ion implantation, we get the simulation results which are consistent with the actual production process well. With the actual formation process of NMOS in modern CMOS technology, process conditions such as implant dose, implant energy, implant tilt, annealing time and temperature are simulated and the simulation results are consistent with the actual production well. According to the simulation results: the higher doping concentration corresponds to the dose 7.0e+15cm-2 and the implant energy 20kev; the maximum junction depth corresponds to the implant energy 60kev, annealing temperature 1150℃and annealing time 25S. This provides some guidance for the actual process of how to control the junction depth and doping concentration.Finally, according to the new problems with smaller semiconductor process technology, we predict new challenges of ion implantation due to the new development of semiconductor integrated circuit technology, and make a thorough inquiry about the future trends of ion implantation technology.