Study On The Destructiveness Effect By DI Water Application In VLSI Processes

With the continuous development of semiconductor, integration enhances unceasingly, the semiconductor process turns to be more complicate and stringent. Any process defect may lead to the electrical parameters fail and low yield.This paper presents the function of de-ionized water in main processes during integration circuit fabrication. Base on the theoretical analysis and experiments verification, the best solutions have been found and used in mass production.Firstly, change the N2 and water setting to reduce the pattern damage ratio by de-ionized water flushing process.Secondly, control the metal galvanic effect by the way of adding CO2 into DI water, thus improving the metal electronic migration issue.Thirdly, finely tune the rinse mode in lithography process to solve the gate oxide damage issue which can cause the electrostatic phenomenon and the antenna effect.