The Material Structure Character Research Of The Gaas-based Resonant Tunneling Diode

Resonant tunneling diode (RTD) is a nano-electronic device that has negative resistance phenomenon at both ends of it ,and it based on the phenomenon of quantum tunneling. with its unique high-frequency, high-speed, negative resistance characteristics and other advantages in nano-electronic device, it has become a focus research in recent years. Currently, RTD in the high-logic integrated circuits design, manufacture and testing of research and has made considerable progress abroad. But both in application and the principle of RTD still relatively lack in China, electronic devices which made by RTD produced the performance are not very good. this paper is based on the principle research of RTD and aim to improve the performance of RTD sensors that designed new layer structure of RTD and manufactured sensor , finally, verify the performance of the sensor which made by new material structure of RTD .This paper mainly describes the design of the new matrial structure and the verify test of the sensor which made by it. First, discussed the tunneling theoretical of the RTD and the parameter which can effect the tunenling process in theory, by analyzing the impact of parameter changes on the RTD that we designed three different layer structure of RTD for comparison and to get wider negative resistance region and low power consumption. Meanwhile, designed four comparative sensitive cells of RTD sensor. For these designs we processed I-V characteristics test and different emitter area I-V test, dynamic performance test of sensor, temperature tests, and series-parallel experiments, the paper did the key reseach on the I-V characteristics and stability of the RTD. through the I-V characteristics test we can see that increase the width of barrier before well in appropriate thickness can wider the width of device negative resistance region and reduce the threshold voltage. Followed by different emitter area I-V test results, we can see that the device with smaller emitter area which get better I-V characteristic. Moreover, through dynamic performance test we get the sensitivity and linearity of RTD sensor,the test results shows that the sensitivity of RTD sensor (101μV V ^-1 g^-1 ) decreased compared to test result in Hu Jie'paper(116μV V ^-1 g^-1 ). Finally, the temperature test and series-parallel experiments which test the temperature feature and electrical stability of RTD sensor shows that the RTD device has good stability. however, sensitive to temperature in a certain voltage range.Through the above experiments proved that the material sructure design of RTD has achieved some results. this paper provides a reference for later's high-precision sensor of RTD design.