Design And Implementation Of The Nanosecond Pulse Driver Of Semiconductor Laser

With the development of the society, pulsed laser is now widely used, especially the Ultra-narrow pulsed laser. Pulse drive power is a important component which can impact the performance of the pulsed laser,and it is also a hot research point.According to the principle and characteristic of the semiconductor laser,several major kinds of pulse drive power are discussed and researched in detail in this paper. Combining with the needs of design performance,the MOSFET is chosen as the drive core of the design. Then the theoretical basis, key technologies of the design project are discussed all round,and then the implementation procedure is analyzed. In the key module discussing, the merits and demerits of the predecessor's work are summarized, then some new ideas and improving measures are proposed. On the basis of discussing result,using the Multisimll software to do simulation tests.In order to reflect the practical situation, building the SPICE model for semiconductor lasers with optical feedback,then analyzing the result of simulation and determining the related parameters.Finally,in this paper a circuit is designed and tested,the output of the current pulse width is 8.605 nanosecond,The lasting time of rising edge and the failling edge is 6.5 nanosecond 4.167 nanosecond.The repetition rate is 100K Hz.The peak of the current is 0.96 A. The circuit's testing results show that the circuit which has the features of narrow pulse width, short lasting time of rising edge and falling edge, simple and effective circuit structure, has reached our design requirements.