Research And Development Of Error Correcting Code Of Nand Flash

As portable devices commonly used in daily life, Nand Flash which is one type of non-valatile memory plays a more and more important role. However, it's prone to errors because of its physical structure, thus how to guaranty reliability of data is one of the crucial techniques which helps application of Nand Flash successful. So Error Correct Control which depends on Error Correcting Code becomes one of the keys to the application of Nand Flash, and is applicated and researched widely.Linearly block code is supposed to be most suitable in memory application, such as Nand Flash, so the industry applies several kinds of code such as Hamming Code, RS Code and BCH Code for Error Correcting Code as the requirement of different Nand Flash varies. This thesis focuses on the Error Correcting Code used on Nand Flash, and demonstrates Hamming Code, RS Code and BCH Code as well as analyzing and investigating the VLSI implementation. Low-density Parity-check Code whose performance approaches Shannon limit is one of the research hotspots. This thesis also introduces it and analyzes the feasibility of its application on Nand Flash.