Performance Study Of Nb Doped TiO₂ Transparent Conductive Film Deposited By RF Magnetron Sputtering

TiO₂ is an important wide bandgap semiconductor and the anatase-phased Nb doped TiO₂ thin film was considered as potential transparent conductive film because it has excellent light and electric performance. In this paper, anatase-phased Nb-doped TiO₂ was demonstrated more suitable as a transparent conductive thin film material than rutile-phased Nb-doped TiO₂ by C ASTER module simulation method. And series of Nb doped TiO₂ transparent conductive films were deposited on super white glass by the method of RF magnetron sputtering. Tested and analyzed the crystal phase, carrier density, hall mobility, resistivity, and visible light in the visible regions of Nb-doped TiO₂ thin film.?1? The band structure, state density, dielectric constant, reflectance and absorption strength of anatase- and rutile- phased TiO₂ :Nb were calculated and analyzed theoretically in the same molar rate of doping extent by the CASTER module of Materials Studio. These results shown that the anatase-phased TiO₂ :Nb had better electrical conductivity, higher light catalysis and the higher transmittance in visible light.?2? With the increase of hydrogen partial pressure, the crystal and rutile-phased Nb doped TiO₂ thin films were mainly obtained when the reaction gas was H2. Changed the partial pressure of H2 and substrate temperature and found the minimum resistivity of film was 7.7×10-3 ?·cm.?3? When the reaction gas was O₂ and changed the partial pressure of O₂ and substrate temperature. Found that with the change of oxygen partial pressure and temperature, the anatase-phased Nb doped TiO₂ thin films were mainly obtained and the miscible films of anatase-and rutile-phased were found in some areas. The insulation properties were presented in the Nb doped TiO₂ thin films which we received in the end, and the resistivity of films was infinite. And the rutile-phased Nb doped TiO₂ thin films which had a large resistivity were obtained in the oxygen-lack state.?4? Therefore the structure of double films was adopted and the films had a good conductivity. The double films Nb doped TiO₂ film structure included seed layer and surface layer. The series of good anatase-phased Nb doped TiO₂ films deposited on amorphous substrates under oxygen-enrich condition were seed layers and the Nb doped TiO₂ films extension deposited on seed layers under oxygen- lack condition were surface layers. The same of crystal phases were anatase-phased in the surface layers of double Nb doped TiO₂ thin films and the same with seed layers. The minimum resistivity of double Nb doped TiO₂ thin film was 1.89×10-3 ?·cm and the higher transmittance in visible light was 87%.