Growth Of Cr⁴⁺:YAG Crystal And Analysis On Defects

As one kind of the Q-switching that most widely applied in 1μm-band, Cr4+:YAG crystals possess a high thermal conductivity and laser damage threshold In this paper, Cr4+:YAG crystal co-doped with Ca2+ and Mg2+ was grown by the Czochralski method inducted by medium frequency. The inside defects of its large lateral heart were over came through optimizing the temperature field system and its growth parameters. The crystal with a diameter of 50nm was grown using the automated growth equipment and its contour was ideal. The growth technique that affect the quality and performance of Cr4+:YAG crystal was studied by the analysis of its defects and absorption coefficient. The longitudinal and radial gradients of absorption coefficient were reduced by optimizing the doping concentration and proportion of the Cr, Ca, Mg ions and improving the atmosphere annealing process The experiment results shown that the inside defects and unstable absorption coefficient in Cr4+:YAG crystal were related with temperature gradient and doping proportion.