Study On The Process Of Gate Fabrication In GaAs Process

The GaAs devices are the second generation semiconductors. As a main role, they are used widely in high frequency and high power applications, such as wireless communication, radar, and electronic confliction. Accompanied with their development, they are also used widely in the application of millimeter wave devices. The author studied the technology of fabricating T gate with very narrow gate length which is the key technique in the GaAs device process, especially, focused on the microlithography. In this paper, the T gates with gate length less than 0.2micrometer were developed. In this paper, the following content were included.The theory concerned T gate in GaAs devices were introduction simply to give a systematic profile of the T gate. Also, other related process were described.As the main role, photolithography were introduced more detailed, and the main techniques were used to fabricating T gate in GaAs were given.Two techniques were studied to fabricating T gate with gate length less than half micrometer adopting DUV photolithography. The result was given together.