The Full Band Ensemble Monte Carlo Simulation Of Hole Transport Properties For Wurtzite GaN

In this paper, we study the hole transport properties of bulk wurtzite phase GaN by the full band ensemble Monte Carlo method. At first, we introduces the structure and characteristics of wurtzite phase GaN and the full band ensemble Monte Carlo method, and compares the full band Monte Carlo method with the general analytic band Monte Carlo method.The main steps include the definition of the physical system,the calculation of scattering rates,initial conditions of motion,calculation of free flight time,choice of the scattering mechanism, choice of the final state and treating result. Self-scattering method is used to simplify the calculation of free flight time. In our simulation model,the scattering mechanisms include acoustic phonon scattering, polar optical phonon scattering,and ionized impurity scattering and so on. The energy range of the holes is divided into two parts for the purpose of calculating the scattering rates. At low energy region,scattering rates are calculated using Fermi′s golden rule.At higher energy region,scattering rates are normalized by the final density of states.The band structure data is calculated using the empirical pseudopotential method. At final, flow chart of program is shown. The simulation results include average energy and average velocity as a function of electric field and so on.Analysis of the simulation results are also given.