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Study On The Resistance-Temperature Property Of SP And TGS Gas Sensors And Emission Mechanism Of Si-substrate SiO2 Film Materials

Posted on:2006-10-07Degree:MasterType:Thesis
Country:ChinaCandidate:Z J MaFull Text:PDF
GTID:2168360152490117Subject:Condensed matter physics
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As the development of environmental science and the environmental detection technique, study on the cheap measuring devices with good performance have been the new hotspot of measurement field. Gas sensitive materials have gas sensitive characteristics because of the adsorption and reaction of gases on the surface of materials. The general measurements record only the change of materials' resistance before and after meeting gases. It reflects only the results, not the dynamic process of adsorption. At present, the dynamic measurements have been adopted by the pursuer and studied the properties of gas sensor in full-scale. Because of this, it is necessary to study the resistance-temperature property and application this theory in real-time sensor signal processing. Furthermore, it is becoming the most important way in dealing with cross-sensitivity in gas analysis.Nanoscale physics and technology, developed from the early 1980s, will be the leading technology in the near future. Since nanoscale materials take much more advantages than traditional materials, they will be applied to many kinds of industrial fields. There is currently an increasing interest in Si nanoscale material as a material that offers new application in silicon-based optoelectronics and is compatible with silicon IC technologies. Photoluminescence (PL) and electroluminescence (EL) from Si-substrate nanoscale materials obtained by various technique has been extensively studied. We have obtained much success in this field.Some important results obtained are as following:1) The study is carried out to investigate the temperature dependence of fluctuation-enhanced sensor signals in Taguchi sensors. Sensor resistances measured at 20 Hz in the SP sensors manufactured by FIS Inc. and TGS sensors manufactured by Figaro Inc. have been analyzed. An empirical formula has been developed for calculating the temperature dependence. The empirical formula has the potential of application in real-time sensor signal processing and the optimization of temperature for the best sensing performance.2) Ge/silicon oxide nanometer multiplayer films are deposited by the R.F. magnetron sputtering technique. Electro-yellow-luminescence spectra were measured from...
Keywords/Search Tags:gas sensor, dynamic measurement, resistance-temperature property, Si-substrate emission materials, R.F. magnetron sputtering, electroluminescence(EL)
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