Font Size: a A A

Research Of ZnO Photoelectric Films By DC Magnetic Control Sputtering

Posted on:2005-08-09Degree:MasterType:Thesis
Country:ChinaCandidate:X L JiaFull Text:PDF
GTID:2168360152467608Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
ZnO, a novel direct-wide-band-gap semiconductor material, has extensive applications in the fields of piezoelectric devices, varistor, solar cells, liquid crystal display. In recent years, with the wide application of the short-wave device, the direct- wide- band- gap semiconductor material is paid attention to more and more and GaN becomes the focuses of opto-electronic material, but with the discover of the optical pump and the resonant cavity of ZnO, the research about opto-electronic properties of ZnO becomes a new focus.Due to its structural properties such as good c-axis orientation and excellent crystal lattice property, it has outstanding opto-electronic properties, especially its ultraviolet stimulated emission. So the key to have ZnO films with outstanding opto-electronic properties is to get ZnO of good c-axis orientation and crystallization.This thesis studied how to obtain outstanding opto-electronic ZnO by DC Magnetic Control sputtering. The content include: Influences of technical conditions and thermal annealing on the structure and light emitting of ZnO films by DC Magnetic Control Sputtering, luminescence mechanism of ZnO. Structural properties of ZnO are studied By X-ray Diffraction and Scanning electron microscope, light Emitting characteristic is tested by photoluminescence experimentation.We got good crystallization ZnO films according to the process conditions: sputtering power is about 180~200 w, the pressure is 6×10-3 torr, the substate is Si (100) substate-to-target separation is 50mm, deposition time is 45 min, the substrate temperature is 250℃ and Ar: O2 =1:4. Thermal annealing can improve the structural properties of ZnO, Highly c-axis oriented ZnO films on (100) silicon substrate were obtained by DC Magnetic Control sputtering while the grain size was about 70 nm. But in light Emitting experimentation, we just observed a obvious 580 nm photoluminescence(PL) peak and two feeble PL peaks in 420 nm and 450 nm,we discuss this result and clarify our viewpoint.
Keywords/Search Tags:ZnO films, substrate temperatures, c-axis orientation, light Emitting, characteristic, thermal annealing, Ar/O2, crystallization quality
PDF Full Text Request
Related items