The Formation Mechanism And Its Physical Properties Of Semiconductor Grains From Silicon-based Films

The traditional production technology of silicon has been mature, so we also use the silicon as the substrate in the photoelectricity integration, and the silicon integration technics is available. If the silicon-based films have a favorable luminescence properties in visible light, this important semiconductor will be the basic material in the next generation of the electronics. The aim of this paper is to study the formation mechanism of semiconductor grains in the silicon-based films. The result is available not only preparing the certain silicon-based films, but also for studying the luminescence mechanism further.We prepare the Si-SiO2 and Ge-SiO2 thin film by using the dual ion beam co-sputtering method and the RF co-sputtering technique respectively, adjusting the substrate temperature (Ts) and the annealing temperature (Ta). Then we analysis the structure of the thin film by using the XRD and TEM.We study the formation mechanism of semiconductor grains from the aspect of the thermodynamics and the dynamics of the grains and the chemistry reaction in the films.We study the photo luminescence of the thin films finally.