Studies Of Characteristics Of 6H-Sic Schottky Diodes

The manufacturing processes and electrical parameters of 6H-S1C Schottky diodes (SBD) have been studied in this work. There were samples A, which were P-type A1/6H-S1C Schottky diodes with oxidized layer, and samples B without oxidized layer. Their forward and reverse current-voltage (I-V) characteristics were measured and discussed. The reverse breakdown voltages of samples A and B were about 600V and 120V, respectively. The ideality factors n and barrier heights0e were measured by the I-V measurement, which were 1.4-1.45 and 1.40-1.43eV,respectively. The reasons that sample A were of better I-V characteristics than those of sample B were analyzed. The factors that made the n factors deviate from 1 and barrier heights lower were discussed. Effects of the series resistance on the I-V characteristics were present. The I-V characteristics were also measured in this paper in the temperature region from 300K to 475K. The experiments indicated that thesamples A had better thermal stability. The effects of y irradiation on the I-V characteristics was also investigatedIn the present work, the characteristics of the Au/6H-SiC SBDs with two different kinds of surface treatments, in which the samples were immersed in the boiling water (labeled NI and PI type) or not (labeled N2iype), were investigated. All samples measured by I-V method, the n and e0 of Pi-type, were 1.28~1.35 and 1.27-1.35eV The n and e0 of NI and N2 samples 1.25-1.3, 1.3-1.36, 1.35-1.4eV, and 1.3-1.38eV, respectively. In conclusion, the Au/6H-SiC SBDs had better Schottky performance than that of Al/6H-SiC SBDs. Some interpretations have been given. The I-V measurements showed that the samples Nz had better thermal stable characteristics. Further research need to do. The effects of high-energy (1.7MeV) electron irradiation on samples N2 were discussed. The results showed that the I-V characteristics of samples N2 obviously changed after electron irradiation with the doseofl.12 X 1016cm-2.