Research On Analysis Model Of Silicon X_piezoresistive Pressure Sensors

Pressure sensors are one kind of devices for measurement and control in many fields and they have bright prospect. With MEMS technology, pizeoresistive pressure sensors can be made on cups of silicon and be made into integrate circuits, so producing in bulk and decreasing the cost is possible.This paper discusses transverse X-pizeoresistive pressure sensors which based on both integrate circuit and micromaching technology. Modeling of transverse pizeoresistive pressure sensors always depends on numerical method so far and the result is not always fit to other occasions. We give rhe equations about the output voltage of rectangle transverse pizeoresistive pressure sensors without stretch poles ,then we introduce the method of perturbation and resolve the equations. After that ,we go on to get an expression of output voltage about X-piezoresistive sensors. The expressions is fit to numerical values of the devices. So , the expression will be very important to devising of X-piezoresistive sensors.