Development Of SiC Crystal Growth Equipment

Along with the rapid development of social information and modern scientific technology, the need for electronic devices, which can work under the high temperature environment under which the Si and GaAs devices are hard to work normally, becomes more and more urgent. While we seek the high temperature devices, the research of perfect performance electronic devices-owning high frequency -, High power ^ high resistant to radiation damage and high performance is also one of the key subjects in the micro-electronic field since 1990s. In this branch, the representative material sic-owning wide-band semiconductors, high electric breakdown field perfect thermal conductivity. Strong resistance to radiation and chemical stability-is the ideal research material. But, in the fact, there isn't satisfied SiC Crystal Growth Equipment in the market at present because of its high cost and production difficulty. Based on the sic craft request and the experience of past years, this subject's purpose is to research and develop Sic equipment that can satisfy the craft request of sic crystal growth. In the course of my design, by the optimal design for the key parts including machinery > Vacuum seal and electric control and so on, I tried my best to solve difficult technology problems as following:i> vacuum seal problem between quarts in the vacuum room and metal flange under the high temperature condition;ii> temperature measure and control of the crucible in the furnace and the program steady control of high frequence power.During debugging the new equipment and making sic crystal growth experiments, we chose the optimal parameter again and again until we got the ideal work condition. We believe our equipment can satisfy the sic growth croft request.