Characteristic Analysis And Design Of Cascaded Double Wavelength Quantum Well Lasers

Double wavelength semiconductor lasers is a kind of novel diode lasers with the function of emitting two wavelength laser. There are various use for double wavelength semiconductor lasers in the different band. 650nm/780nm double wavelength quantum well lasers mainly apply to the optical pickups of DVD-ROM driver and DVD player. However 950nm/990nm double wavelength quantum well lasers are promising for optical measure.This dissertation's contents include two respects. First, the simulation, experiment and characteristic analysis for high power 950nm/990nm double wavelength strained quantum well lasers. Secondly, the simulation and design for 650nm/780nm double wavelength multiquantum well lasers. Calculation and experiment for conventional multiquantum well lasers with nearby wavelength of 650nm are performed for the basis before the 650nm/780nm lasers' simulation and design.By use of G. D. Shen's tunneling cascade theory we have fabricated high performance and high power tunneling cascade InGaAs/GaAs/AlGaAs 950nm/990nm double wavelength strained quantum well lasers on the basis of former tunneling cascade high power lasers and high brightness light emitting diodes. The lasers' two peak wavelength are 95?nm and 990?nm. EL spectrum's FWHM is 3nm. The maximum one side output power of uncoated lasers attain to 2W and the minimum threshold current is 120mA. Thereafter, AlGalnP and AlGaAs material system lateral real refractive index waveguided 650nm/780nm double wavelength multiquantum well lasers for DVD-ROM driver and DVD player's optical pickup system are simulated and designed on the basis of the experiment of conventional lasers and the former research of tunneling cascade devices.