Study Of Radiation Effect Of The Silicon Gate Si/SiO₂ System Implanted BF₂～+ At Low Dose Rate

The radiation effects of MOS devices implanted BF2 at low dose rate are investigated in some different respects in this paper.Firstly, the theories relative to radiation effect are discussed in brief, including some models of interface trap formation and process of producing oxide trap charge in radiated MOS devices. Besides, the radiation effects at low dose rate and the mechanism of radiation hardening for BF2 implantation are reviewed too.Secondly, the radiation effects of the system of silicon gate Si/SiO2(silicon gate NMOS and PMOS) implanted BF2 are made a deep systematic study. Especially, the relationship between threshold voltage shift (Vth and Vit Vot) in radiated MOS transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically. With taking advantage of the model of two-stage H+ process of interface trap formation and the role that F play in radiation hardness in gate-oxide . the above-mentioned result is deeply analyzed.In addition, research on radiation effects of MOS capacitor implanted BF2+ at low dose rate are also made in short.