The Study Of The Simulation For CCD

This paper analyses the numerical simulation problems of the semiconductor devices deeply. A one dimensional pn junction diode is worked out satisfyingly by the recursive method with the Matlab5.3 software. And the basic two-dimensional transient state equations for semiconductor device are dispersed and linearized. The matrix-vector form of the basic functions is get. And the solution methods are also discussed.On the basis of the deep analysis of the semiconductor device numerical analytical methods, using a PISCES for DOS as a kernel, we develop a software which can simulate the semiconductor devices under windows operation system. The software is programmed by mixed languages including Visual C++, Fortran9O and Matlab. So the problems such as mixed-language programming are solved and the interpolation algorithm on a triangle-partitioned planarity is realized. Because of the software, the semiconductor device simulation under windows becomes possible.At last, a buried-channel CCD(BCCD) is simulated by the developed software. The influences of some parameters such as the gate length, the gap width between the gates and the depth of the channel to the performance as charge handling capacity and charge transfer efficiency of the BCCD are discussed. And the dark current is also analyzed. The simulation to the BCCD proves that PISCES is suitable for the for the CCD simulation.