Shielding the magnetic field in the cathode of the magnetron sputtering device and introducing a magnet below the substrate. Thus the magnetic field under the substrate take action during sputtering. In this way, the effect of the magnetic field on the movements of the plasma during deposition and the film growth can be investigated. The appearances of the films deposited by this means are: in the center of each film, there's a spot, and the spot is surrounded by some loops. But the diameter of the spots is changed with the height of the target and the substrate over the magnet. Moreover crystal growth becomes better in the external magnetic field. In the process of the film deposition, the appearance of the glow of the plasma also has changed and is constringed gradually to the substrate. When we used the same input power in the two methods, we can find the self-bias volt is smaller and the deposition velocity is faster for external magnetic field than the magnetron sputter. For these phenomena, we believe that in the space of the sputter there are lots of ions and the effects on them by the external magnetic field are the causes.
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