The Synthesis Of Cu₂ZnSnS₄ Thin Film On ITO Substrate In A Single Step

Quaternary Cu2ZnSnS4 (CZTS) is direct optical band gap p type semiconductor. The CZTS thin film is a promising candidate for low cost absorber layer in thin film solar cell due to its excellent material properties for obtaining high efficiency such as suitable band gap energy of 1.4-1.5 eV and large absorption coefficient over 104cm-1.The Cu2ZnSnS4 (CZTS) thin films have been electrodeposited onto ITO glass substrates in one step, in potentiostatic mode at room temperature. Finger out a suitable condition to deposit CZTS.The deposition mechanism of the CZTS thin film has been studied using electrochemical techniques like linear scanning, potential static, galvano static.The structural,morphological, and optical properties of the CZTS thin films have been studied using X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption techniques. These properties are found to be strongly dependent on the post-annealing treatment. The polycrystalline CZTS thin films with kieserite crystal structure have been obtained after annealing thin films at 500℃in nitrogen atmosphere for 20 min. The electrosynthesized CZTS film exhibits a The direct band gap energy for the CZTS thin films is found to be about 1.50 eV.The crystallization of CZTS thin films which were deposited 3 times is better than the ones which were deposited only once.