Research On The Transport Of High-energy Photon In Semiconductor By Monte Carlo Simulations

The radiation damage induced-by energetic particles and photons is one of the main reasons of degradation or even failure of electronic systems in man-made and space radiation environment. The research of radiation damage in semiconductor materials is the basis of that in electronic systems and their hardening. Nowadays, with the expansion of radiation tolerance in commercial use, the problem of radiation tolerance will become our new challenge. And, studying how the energetic photons transfer in semiconductor is the important part of radiation damage research. We will make the solid basis for studying the problem of radiation tolerance, that is the significance of studying in this paper.In this paper, the content of reach on high-energy photon transport in several semiconductors by Monte Carlo Simulation. By use of a forced collision, the calculating efficiency and precision have been improved evidently. Energy deposition of gamma rays is calculated using Monte Carlo Simulation.The Details of the interaction between high-energy photons and material was analysed. The main photons interaction with the material, that is, the photo-electric effect, Compton scattering (effect) and the pair production effects, by studying the response mechanism, to draw the various reaction cross-sections and the particle energy and angular distribution.The GaAs high-energy photons response characteristic is studied by using the database of high-energy photons reaction cross-sections. The photoelectric effect, Compton scattering and the pair production in GaAs materials in different energy situations is probability analysised, as well as the number of reactions between the high-energy photons of units of length GaAs materials and semiconductors. In addition, The deposition of 2MeV photon energy and its distribution are calculated by the program written, and the calculated results are analyzed.