Monte Carlo Simulation Of The Migration Of Carriers In Semiconductor

In this thesis, the migration transport process of carriers in semiconductor is studied through Monte Carlo method based on nearly free electron band model. Semiconductor is one of the most interesting and useful solid materials, and the study of the migration transport process of carrier in semiconductor can help to disclose the microscopic processes in semiconductor more deeply and know the material characteristics more clearly. In this thesis, the light absorption in semiconductor and the Bragg reflection at the first Brillouin Zone boundary are considered in the simulation, and the acoustic phonon scattering mechanism is considered in the Monte Carlo simulation model according to our analysis and experiment conclusions. Based on the above investigations, the migration transport process of carrier in diamond as an example is stimulated by using our model, and then the simulation results are compared with the experiment results to validate the Monte Carlo model.We determine the number of carriers in our Monte Carlo simulation model, study the acceleration stage and the uniform motion stage of carriers in semiconductor, and discuss the impact of thickness, external electric field strength and temperature on the migration transport process of carriers in semiconductor. Through these studies, we find that the acceleration stage of carriers in semiconductor only lasts a period of time under low field, and then the energies of carriers tend to become constant so that the migration transport process of carrier enters into the uniform motion stage. The energies of carriers become higher with the increase of the thickness in semiconductor, but after the thickness reaches a certain value, the energies of carriers do not increase any more. Similarly, the energies of carriers become higher with the increase of the external electric field strength in semiconductor, but after the electric field strength reaches a certain value, the energies of carriers do not increase any more. The flight times of carriers become shorter with the increase of the electric field strength firstly, and then become longer with the increase of the electric field strength after the electric field strength reaches a certain value in semiconductor. The energies of carriers become lower with the increase of the temperature in semiconductor. In low temperature range, the flight times of carriers become shorter with the increase of the temperature at first, and then become longer after the temperature reaches a certain value.