| As the channel lengths of MOSFETs are being scaled down, the focus is on replacing silicon by high mobility channel materials, such as Ge and III-V semiconductors. This is because mobility and saturation velocity determine the on current of short channel MOSFETs. However, a priori, it is not possible to determine the material that will maximize the ratio of ON current to OFF current. Hence it is interesting to perform simulations to compare the performance of various semiconductor devices with their silicon counterparts.; In this work, a semiclassical Monte Carlo simulator, Monte Carlo University of Texas (MCUT), has been used and modified to handle Ge and III-V MOSFETs. It is capable of handling full bandstructure and incorporates various scattering models, including, inelastic acoustic phonon scattering with longitudinal and transverse modes, optical phonon scattering, impact ionization, ionized impurity scattering, surface roughness scattering, remote Coulomb, remote surface roughness scattering and polar optical phonon scattering.; Quantum correction in the inversion layer is taken into account in the form of a modified potential that reproduces the correct concentration of carriers. Germanium N- and PMOSFETs and GaAs and InP NMOSFETs seem to perform worse than their silicon counterparts when the saturation currents are compared at the same gate overdrive. The results on GaAs and InP NMOSFETs are considered preliminary at this stage. |
