Studying Of ZnO Thin Films Prepared By RF Magnetron Sputtering

ZnO has attracted great interest for its wide band gap (3.37eV) and relatively large exciton binding energy (60meV) at room temperature (RT). It has been regarded as one of the most promising candidates for the next generation of ultraviolet (UV) light-emitting diodes (LED) and lasing devices(LD) operating at high temperatures and in harsh environments. Because of the advantages in structure, electrical and optical propertie as wel as various methods for synthesizing ZnO thin films, such as megnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition, spray pyrolysis, molecular beam epitaxy.etc. methods, ZnO thin films have widely applications in photodetectors, surficial acoustic devices, transparent electrodes, solar cells and so on.In this paper, ZnO thin films were prepared by megnetron sputtering method, and the influences on structure, electrical and optical properties of as-prepared ZnO thin films has been well studied.ZnO thin films were deposited on Al2O3 (001) substrates by megnetron sputtering method, and the growth temperatures were 500℃,550℃,600℃and 650℃, respectively. Annealing treatments for as-deposited samples were performed with different temperatures. We investigated the structure, electrical and optical properties of the ZnO thin films using X-ray diffraction (XRD), Hall and transmittance spectrum measurements. The results indicated that crystalline quality, electrical and optical properties could be highly improved by proper growth temperature and annealing temperature.