Study On Preparation And Properties Of SiO₂ Thin Films By RF Magnetron Sputtering

ilicon oxide?Si O₂?thin films were deposited on Si and Al/Si substrate by RadioFrequency reactive magnetron sputtering.The high pure Alunminum?99.99%?was used as sputtering target material,high pure argon?99.99%?and high pure oxygen?99.99%?were used as sputtering and reactive gas respectively.The Si O₂ films were characterized by atomic force microscopy?AFM?,surfcorder system and ellipsometer.According to the experimental results,the experimental parameters were optimized,and the effects of working pressure,sputtering power,argon oxygen flow ratio and intermediate frequency bias on the optical properties,deposition rate and surface morphology of Si O₂ films were studied by single variable method.Experimental results showed as followed:1.It was found that the working pressure,the sputtering power,the flow ratio of O₂ and the intermediate frequency bias have a significant effect on the refractive index,deposition rate and surface morphology of the Si O₂ film.With the increase of the working pressure,the deposition rate of the film tends to decrease and the refractive index decreases.With the increase of the sputtering power,the deposition rate of the film increases linearly,the refractive index increases first and then decreases.The deposition rate and refractive index of the films decrease with the increase of oxygen flow rate,and the deposition rate is the best at20: 2,the refractive index is better,the intermediate frequency bias is in the range of 0-200 V,The deposition rate of the film tends to decrease,the refractive index increases first and then decreases to 1.458 at 150 V.The surface roughness of the film decreases from 1.04 nm at 0V to 0.452 nm at 150 V,and the surface roughness of the film is 0.452 nm,And the surface morphology is the most smooth,continue to increase the bias,surface roughness increased to0.479 nm,the surface becomes not smooth.According to the analysis results,the influence of experimental parameters on the properties of Si O₂ films was discussed.2.The surface roughness of the film decreases with the increase of surface roughness of the film,and the surface morphology of film becomes smooth and is the best at 150 V Bias,the performance of the film is reduced,indicating that a certain bias can improve the Si O₂ film and Al layer bonding,to form a more dense mixed film material.3.The optimum process parameters are as follows: the sputtering power is 100 W,the ratio of argon and oxygen is 20:2,and the optimum conditions are as follows: the sputteringpower is 100 W,the ratio of argon to oxygen is 20 : 2,the working pressure is 0.4Pa,the frequency bias is 150 V.Si O₂ thin films;RF reactive magnetron sputtering;Intermediate frequencybiassurface topography...