Magnetron Sputtering Zno Thin Films Of A1n Buffer Layer And Its Properties

Quite a lot of research has proved that ZnO films have been applied massively in gas-sensitive devices, Surface acoustic wave devices and Pressure-sensitive devices. High quality ZnO films Preparation are the research emphasis and focus, and to achieve heteroepitaxy of ZnO films with Si are of obvious cost advantage and of compatibility with microelectronics. For Si and ZnO, the mismatch degrees of lattice constant and thermal expansion coefficient is so vast that it is difficult to achieve the heteroepitaxy of ZnO films, and intermediate buffer layer is a worth researching process. As the lattice structure of AlN is as same as ZnO, it can be used as the buffer layer to achieve heteroepitaxy of ZnO films to improve the ZnO/AlN interface structures.Using RF magnetron sputtering, the research has found Optimal processing parameters to make AlN films and ZnO films C shaft preferred orientation, and thus make ZnO bilayer thin films preparation. Using XRD, hall effect testing system and SEM, the research analyzes the difference of structure, morphology and Electrical properties which under the condition that there are AlN buffer layer ZnO films or not, or under different Sputtering time. The research shows that whether there are buffer layer or not, ZnO always has C shaft preferred orientation. After using AlN buffer layer, the half peak width of X-ray diffraction peak for ZnO films are reduced and the resistivity are reduced with 2θapproaching the diffraction peak place of ZnO, which shows that the using of AlN buffer layer can improve the structure and Electrical properties of ZnO greatly. Besides, through the analysis on the structure, morphology and Electrical properties of AlN buffer layer ZnO films under different Sputtering time, it shows that with the adding of buffer layer sputtering time, ZnO films are still have the charctirstic of C shaft preferred orientation, with the ball close pile of structure, and of more roughness, smoother films and of Crystallization density.When AlN buffer sputtering time is 60min or 90 min, ZnO almost has no difference in its roughness, films smoothness and grain size. But with the adding of buffer layer sputtering time, resistivity of ZnO films first reduce, and then increase.