Reseach On Infrared Response And Preparation Technique Of Amorphous Silicon Thin Film

As a great potential semiconductor material, amorphous silicon thin film has been widely used in daily life. With its excellent optical properties such as photoelectric effect, thermal resistance effect, thermo-optic effect and good compatibility with integrated circuit technology, amorphous silicon material has taken an very important place in solar power, optoelectronic integrated devices and thermal imaging and other fields.This article will focus on the thermo-optic effect of amorphous silicon and the requirements of amorphous silicon material applied n daily life, and the study is listed as the follows:The single-oscillator model of hydrogenated amorphous silicon has been used to establish a mathematical model of the thermo-optic coefficient, and the formulas of the thermo-optic coefficient has been deduced according to the model, and then a preliminary simulation analysis on various parameters has been done. Based on the preliminary simulation and analysis, we simplify the parameters approximately, and in accordance with the difference hydrogen level in the amorphous silicon, we establish two models to discuss and analyze the relationship between the thermo-optic coefficient of amorphous silicon and the hydrogen content.Hydrogenated amorphous silicon material have been prepared by PECVD and analyzed by Fourier transform infrared spectroscopy to study how the different experimental conditions influence the properties of hydrogenated amorphous silicon material, and the results indicate that lower RF power, lower substrate temperature and lower reaction pressure can improve the hydrogen content of amorphous silicon material.By the Fabry-Perot filter model, the influence of the thickness uniformity of the film on the filter’s properties has been analyzed, illustrating that studying the uniformity of the film thickness is significant.In order to obtain amorphous silicon thin film of uniform thickness, the reaction chamber of PECVD equipment have been simulated by using Fluent software and amorphous silicon thin film have been prepared by PECVD. The thickness of films have been measured by step apparatus, and compared to the simulation results, it indicate thatthe thickness distribution and airflow distribution of the substrate surface near the film is closely related, the intake flow of the reaction and the chamber deposition rate was positively correlated. In addition, for our PECVD device, about 20 mm is the best plate spacing.