In Pecvd Prepared By Embedding The Silicon Nitride Film Of Silicon Quantum Dots And Their Luminescence Properties Study

Silicon-based nanomaterials, which are developed rapidly in resent years, are a kind of new pattern optoelectronic information materials. They are of great importance both in light-emitting diode (LED) and in optoelectronic-integrated technology. Stable and efficient photoluminescence (PL) can be achieved for silicon clusters embedded in silicon oxide or silicon nitride, but the PL origin of silicon nanostructures is still in debate. The clarifying of the PL origin for the silicon-based nanomaterials not only can deepen and enrich the research of the low-dimensional physics but also is more advantageous for the development of the silicon-based optoelectronic devices. In this thesis, we deal mainly with the growth and characterization of silicon nitride films embedding Si quantum dots (QDS), and the major results are listed below: 1. The silicon nitride films embedding Si QDS are prepared by plasma enhanced chemical vapor deposition (PECVD) technique at low temperature. Furthermore, the structural and optical properties of the films at different annealing temperatures are studied. 2. The influence of different gas flow rate ratios to the Si-rich silicon nitride films is studied. And the structural and optical properties of the films for the different ratios are studied. 3. From the influence of annealing temperature and gas flow rate ratios to the Si-rich silicon nitride films, the relationship between the optical characteristics and the structural properties of the films is studied and the PL origin of the silicon-based nanomaterials is clarified. In terms of the present results, it is reasonable that the PL is generally attributed to the presence of Si clusters with an enlarged band gap due to a quantum confinement effect in the silicon nitride films. 4. Based on the experiments, the presence of Si clusters in the silicon nitride films is confirmed. And the size of the Si clusters is calculated.