Preparation Of High-Power Semiconductor Laser Cavity Face Films

This paper introduces the work and fundamental principle of semiconductor laser.In order to obtain the high gain,reduce the threshold value electric current,enhance the quantum efficiency and the laser output,before the design the back cavity surface plates high -reflection film,the front cavity surface plates the low-reflection membrane.Because the film should have low absorption,low scatter and high threshold value,ZrO₂ and MgF₂ are selected as the materials of the film,causes the back cavity surface index of reflection will heighten,the front cavity surface plates Al₂O₃ and H4 membrane send the transmissibility will depress,the power efficiency enhances very prominence,in the abstract,has not compared with the coating component enhanced 3 times.Because the film should have low absorption,low scatter and high threshold value,ZrO₂ and MgF₂ are selected as the materials of the film.At the same time,the film protects the component end surface from oxygen and water in the air.The film is coated by Denton Integrity-36 vacuum deposition equipment associated with ion beam aid system and introduce the basic of thickness control for film.