| Abstract It is urgent to look for advanced materials to replace the silicon-based materials currently in the development of future ultra-large scale integration storage. Among many materials such as capacitors for dynamic random access memory(DRAM) generation of 64Mbit, tantalum oxide is always considered to be one of more promising candidates. Thus, the fabrication of Ta205-based thin films with high-quality has attracted attention in recent years. Since appeared in 1987, Pulsed Laser Deposition(PLD) made rapid progress and has been one of the best technology of thin films preparation., PLD has received much attention and has been applied. High dielectric constant Ta205-based thin film, which prepared by PLD, has wide application prospect in the area of high-density DRAM manufacture, and maybe enlarge the capability of DRAM. In this thesis, PLD of (Ta205) O.92( Ti02) o.os target at 248nm has been mainly investigated. Firstly, in this paper the establishment about the PLD experiment and its development of PLD technology are introduced chiefly. Secondly, some results were derived from some experiments of PLD, including the preparation of the (Ta205) O.92( Ti02) o.o~ ceramic target and the dielectric film of PLD, during the process, a best deposition condition of PLD has been summed up, and the dielectric characteristic has been detected. The last section is introduction of the software桺LD2000. In this section, computer recording, analyzing and querying of database method would be explained and applied to the experiments of PLD, this software can be used for simplification and optimization of PLD, which will enhance efficiency of the experiments helpfully. x...
|
PDF Full Text Request