Investigation Of Chaos In N-GaAs

n-GaAs is one kind of the typical semiconductor material, and is widely applied in detectors and Gunn effects diodes, etc. So the chaos investigation of n-GaAs has the theoretical guide function to the preparation and application of the relative devices.Firstly, this thesis introduces the basic knowledge of chaos, main method of controlling chaos, energy band structure and carriers transfer features of n-GaAs. Then, for n-GaAs biased by dc and ac voltages, chaos features are numerically investigated using its dynamical equations through the token methods of the bifurcation diagram, Lyapunov exponent, attractor, and time series. It is done to analysis the route into chaos and dynamical behaviors (periodic or chaotic) in different parameter regions in this n-GaAs system. Finally, the chaotic state in the n-GaAs system is controlled, this system can go into stable periodic state, and the theoretical analysis on the result of chaos control is given.