| The interaction between energetic particles in near earth space and the semiconductor materials in microelectronic devices can cause single event effect,which is one of the main concerning that endangers aerospace safety.And the generation of single event effect is directly related to the collection of charge ionized by galactic and cosmic rays in the sensitive volumes of microelectronic devices.Since the single-event effect mapping technology can be used to directly map the internal charge collection and draw the radiation-sensitive areas of a semiconductor device,it has been a powerful tool to carry out mechanism study for single event effect and radiation hardening design for microelectronic devices.However,with the rapid development of electronic industry and the sustained reduction of feature-size in semiconductor devices,the spatial resolution of single event effect mapping has been insufficient to meet the requirements in current research of single event effect for advanced microelectronic devices.In this thesis,we creatively proposed a single-event effect mapping technology that can achieve submicron spatial resolution with the high energy heavy ions,it consists of the technology of single ion localization,single-event effect acquisition,single ion radiation control and time sequence analysis.And an experimental system of the super-resolution mapping for single event effect was also established based on the microbeam of Heavy Ion Research Facility in Lanzhou(HIRFL).Then,the single-event upset(SEU)experiment was carried out with two kinds of commercial SRAM manufactured with ～350 nm and 40 nm CMOS process to map the SEU sensitive volumes in both devices.This study not only promoted the proposal of the Feature Cell of SRAM,but also verified the spatial precision of the super-resolution mapping technology.Meanwhile,by combining the conventional layout of SRAM bitmap with the sensitive volume in SRAM,a decryption model for determining the conventional interleaving structure and decoding the bitmap layout was developed.Furthermore,this study proposed a method to predict device level single-event upset cross-section by the reconstruction of sensitive volumes in the SRAM,and the feasibility of this method were verified by the single-event effect experiments.In general,this work developed a technology of the super-resolution mapping for single event effect,and the spatial resolution was verified to be as high as 0.5 μm while using the highest single nuclear-power ion provided by the microbeam.This work also proposed the concept of Feature Cell of SRAM,and explored the idea that predicting the single-event upset cross section of a SRAM using the Feature Cells.Besides,a decrypting model for deciphering the conventional interleaved structure of SRAM was established.In this work,a new technology that can be used in the field of ion beam analysis,single-event effect mechanism study and radiation hardening was provided,and it is expected to serve the application of high-energy heavy ion facilities in China and the construction of national aerospace industry. |
