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Interface studies in silicon nitride/silicon carbide and gallium indium arsenide/gallium arsenide systems

Posted on:1992-08-25Degree:Ph.DType:Dissertation
University:Case Western Reserve UniversityCandidate:Unal, OzerFull Text:PDF
GTID:1478390017950036Subject:Engineering
Abstract/Summary:
CVD ;Comparison is made of microstructural and mechanical properties of hot-pressed (HPed) ;GaInAs/GaAs strained-layer superlattices (SLS) deposited on (111), (001) and (112) GaAs substrates were investigated. For the (111) substrate, the dislocation network is triangular while on the (001) substrate, the network is formed by two orthogonal sets of crossing dislocations; on (112), the network is similar to that seen on the (111) substrate. The Burgers vectors of all the dislocations are 1/2...
Keywords/Search Tags:Substrate, Network
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