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Total-dose gain degradation in modern bipolar transistors

Posted on:1994-07-02Degree:Ph.DType:Dissertation
University:The University of ArizonaCandidate:Nowlin, Robert NathanielFull Text:PDF
GTID:1478390014992236Subject:Engineering
Abstract/Summary:
The experimentally observed trends in the total-dose gain-degradation response of modern, BiCMOS compatible bipolar transistors are presented. A model for the post-irradiation excess base current is described. The model is applied to separately calculate the two radiation-induced damage densities: the net oxide charge density and the midgap-level interface-trap density. Hardness assurance testing recommendations are made based on the observed experimental trends.
Keywords/Search Tags:Total-dose, Modern, Bipolar, Observed, Trends
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