Total-dose gain degradation in modern bipolar transistors |
Posted on:1994-07-02 | Degree:Ph.D | Type:Dissertation |
University:The University of Arizona | Candidate:Nowlin, Robert Nathaniel | Full Text:PDF |
GTID:1478390014992236 | Subject:Engineering |
Abstract/Summary: | |
The experimentally observed trends in the total-dose gain-degradation response of modern, BiCMOS compatible bipolar transistors are presented. A model for the post-irradiation excess base current is described. The model is applied to separately calculate the two radiation-induced damage densities: the net oxide charge density and the midgap-level interface-trap density. Hardness assurance testing recommendations are made based on the observed experimental trends. |
Keywords/Search Tags: | Total-dose, Modern, Bipolar, Observed, Trends |
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