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Electrical characteristics of novel heterojunction diodes of thin relaxation semiconductors/p-silicon

Posted on:1996-12-25Degree:Ph.DType:Dissertation
University:New Jersey Institute of TechnologyCandidate:Lee, Hyung JooFull Text:PDF
GTID:1468390014987567Subject:Engineering
Abstract/Summary:
The relaxation semiconductor is defined as one in which the dielectric relaxation time (;Electrical characteristics of both diodes were found to have interesting effects: negative capacitance, negative resistance, space charge limited current, and bistable switching with long term memory. During the C-V measurement of a disordered Si/c-Si heterojunction diode, for the first time, a constant negative capacitance of 1520pF was observed from ;An inductive part of the heterojunction diode was derived theoretically using the relaxation theory and Shockley theory. The inductance was either constant if ;It was proposed that conductivity modulation, by carrier injection in a thin relaxation semiconductor, causes an inductive behavior, and the relaxation would be more pronounced by the carrier screening of impurities. The novel heterojunction diode may replace a physical inductor in microelectronics.
Keywords/Search Tags:Heterojunction diode, Relaxation
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