Numerical Simulation And Test Of Recovery Characteristics Of Heterojunction Diode

This paper aims at the application of computer modelling and simulation technology of wide band gap diode forward recovery characteristics?forward I-V characteristics,and the use of computer technology to design a diode reverse recovery time test system with high precision,high accuracy and high precision.Specific arrangements are as follows:First,Matlab simulation was used to simulate the forward recovery process of GaN/SiC heterojunction.The effects of external factors(change rate of external current,temperature,etc.)and internal ones(doping concentration of N region,electron mobility,etc.)on the forward peak voltage and recovery time were analyzed.The forward recovery process of GaN/6H-SiC,GaN/4H-Si C and GaN/3C-Si C heterojunctions were compared.The simulation results show that the above factors influence obviously on the forward recovery of GaN/SiC heterojunction.Forward recovery behavior of GaN/SiC heterojunction can be optimized by selecting a suitable material.Then,Matlab programming was used to simulate the forward I-V characteristics of GaN/SiC heterojunction.The influence of temperature on the forward C-V characteristics is analyzed,and the effects of temperature,the doping concentration of P region and carrier electron lifetime of P region on the forward I-V characteristics were analyzed.The simulation results show that when coupled with forward voltage is bigger(about 2V),the forward current depends mainly on the electron current injected into P region,while the temperature and other factors influence obviously on the forward I-V properties of GaN/SiC heterojunction.Forward I-V characteristics of GaN/SiC heterojunction can be optimized by selecting a suitable material.Finally,the reverse recovery time testing system of the diode was introduced.The diode reverse recovery time testing system of circuit system,as well as the control flow,was formulated,to participate in the completion of the diode reverse recovery time test system hardware circuit.the design and the functions of each part of the hardware circuit was analyzed in detail,and the effectiveness of test system was verified by experimental tests(the GaN/SiC heterojunction diode does not exist,so the test diodes are other diode).